for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 hmc751lc4 smt phemt low noise amplifier, 17 - 27 ghz v00.0409 general description features functional diagram the h m c751 l c4 is a high dynamic range gaas ph em t mmi c l ow noise amplifer ( l na) housed in a leadless p b free r oh s compliant sm t package. the h m c751 l c4 provides 25 db of small signal gain, 2.2 db of noise fgure and output ip 3 of +25 dbm. the p 1db output power of +13 dbm also enables the l na to function as a lo driver for balanced, i /q or image reject mixers. the h m c751 l c4 allows the use of surface mount manufacturing techniques. noise f igure: 2.2 db gain: 25 db oip 3: +25 dbm s ingle s upply: +4v @ 73 ma 50 o hm m atched i nput/ o utput r oh s compliant 4 x 4 mm p ackage electrical specifcations, t a = +25 c, vdd 1, 2, 3 = +4v typical applications the h m c751 l c4 is ideal for: ? p oint-to- p oint r adios ? p oint-to- m ulti- p oint r adios & v s at ? test e quipment and s ensors ? m ilitary p arameter m in. typ. m ax. m in. typ. m ax. units f requency r ange 17 - 20 20 - 27 ghz gain 22 24 23 25 db gain variation o ver temperature 0.025 0.028 db/ c noise f igure 2.2 2.8 2.0 2.6 db i nput r eturn l oss 17 15 db o utput r eturn l oss 16 15 db o utput p ower for 1 db compression ( p 1db) 13 13 dbm s aturated o utput p ower ( p sat) 15 15 dbm o utput third o rder i ntercept ( ip 3) 25 25 dbm s upply current ( i dd)(vdd = +4v) 50 73 90 50 73 90 ma
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 input return loss vs. temperature output return loss vs. temperature gain vs. temperature gain vs. supply voltage noise figure vs. temperature output ip3 vs. temperature hmc751lc4 v00.0409 smt phemt low noise amplifier, 17 - 27 ghz 14 16 18 20 22 24 26 28 30 14 16 18 20 22 24 26 28 30 +25 c +85 c - 40 c gain (db) frequency (ghz) 14 16 18 20 22 24 26 28 30 14 16 18 20 22 24 26 28 30 4.5 v 4.0 v 3.5 v gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 14 16 18 20 22 24 26 28 30 +25 c +85 c - 40 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 14 16 18 20 22 24 26 28 30 +25 c +85 c - 40 c return loss (db) frequency (ghz) 0 2 4 6 8 10 14 16 18 20 22 24 26 28 30 +25 c +85 c -40 c noise figure (db) frequency (ghz) 14 16 18 20 22 24 26 28 30 14 16 18 20 22 24 26 28 30 +25 c +85 c - 40 c ip3 (dbm) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 p1db vs. temperature power compression @ 21 ghz reverse isolation vs. temperature p1db vs. supply voltage psat vs. temperature hmc751lc4 v00.0409 smt phemt low noise amplifier, 17 - 27 ghz 4 6 8 10 12 14 16 18 14 16 18 20 22 24 26 28 30 +25 c +85 c - 40 c p1db (dbm) frequency (ghz) 4 6 8 10 12 14 16 18 14 16 18 20 22 24 26 28 30 3.5 v 4.0 v 4.5 v gain (db) frequency (ghz) 4 6 8 10 12 14 16 18 14 16 18 20 22 24 26 28 30 +25 c +85 c - 40 c psat (dbm) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 14 16 18 20 22 24 26 28 30 +25 c +85 c - 40 c isolation (db) frequency (ghz) 0 5 10 15 20 25 30 -25 -20 -15 -10 -5 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 outline drawing absolute maximum ratings drain bias voltage (vdd1, vdd2, vdd3) +5.5 vdc rf i nput p ower ( rfi n)(vdd = +4 vdc) -5 dbm channel temperature 175 c continuous p diss (t= 85 c) (derate 11.2 m w /c above 85 c) 1 w thermal r esistance (channel to ground paddle) 89 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c vdd (vdc) i dd (ma) +3.5 69 +4.0 73 +4.5 77 typical supply current vs. vdd note: amplifer will operate over full voltage range shown above. no tes: 1. p ackag e bo dy m aterial : alumina 2. le ad and g ro und p addle pl ati ng: 30-80 mic roinches gold o ver 50 mic roinches minimum nickel 3. dimensions are in inches [millimet ers] 4. le ad sp ac i ng t olerance is non-cumul ative 5. p ackag e w arp shall no t e xcee d 0.05mm datum 6. all g round leads and g round p addle mus t be soldere d t o pcb rf g round ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s hmc751lc4 v00.0409 smt phemt low noise amplifier, 17 - 27 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 pin descriptions p in number f unction description i nterface s chematic 1, 3, 5 - 7, 12 - 14, 16, 18, 19, 24 gnd these pins and package bottom must be connected to rf /dc ground. 2, 8 - 11, 17, 23 n/c this pin may be connected to rf /dc ground. p erformance will not be affected. 4 rfi n this pin is ac coupled and matched to 50 o hms. 15 rfo ut this pin is ac coupled and matched to 50 o hms. 22, 21, 20 vdd1, 2, 3 p ower s upply voltage for the amplifer. e xternal bypass capacitors of 100 p f , 1,000 p f and 2.2 f are required. application circuit component value c1, c2, c3 100 p f c4, c5, c6 1,000 p f c7, c8, c9 2.2 f hmc751lc4 v00.0409 smt phemt low noise amplifier, 17 - 27 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 evaluation pcb list of materials for evaluation pcb 123815 [1] the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request. i tem description j1 - j2 p cb m ount k connector j3 - j6 dc p in c1 - c3 100 p f capacitor, 0402 p kg. c4 - c6 1,000 p f capacitor, 0603 p kg. c7 - c9 2.2 f capacitor, tantalum u1 h m c751 l c4 amplifer p cb [2] 123813 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon 25 fr hmc751lc4 v00.0409 smt phemt low noise amplifier, 17 - 27 ghz
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